AM2729-110
DESCRIPTION
PIN CONNECTION The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR. Low RF thermal resistance, refractory/gold metallization, and puterized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM2729-110 is supplied in the BIGPAC™ Hermetic M etal/Ceramic package with i nternal Input/Output matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter 4. Base
PDISS IC VCC TJ T STG
Power Dissipation- Device Current-
(TC ≤ 100°C)
438 12 48 250
- 65 to +200
W A V °C °C
Collector-Supply Voltage- Junction Temperature (Pulsed RF Operation) Storage...
