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STW9N150
N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH™ Power MOSFET
Features
Type STW9N150
VDSS 1500 V
RDS(on) < 2.5 Ω
■ 100% avalanche tested ■ Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching ■ Very low on-resistance
ID Pw 8 A 320 W
Application
■ Switching applications
Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
3 2 1
TO-247
Figure 1. Internal schematic diagram
Table 1.
9N150 Datasheet
