Datasheet4U Logo Datasheet4U.com

7NM60N - N-channel Power MOSFET

Datasheet Summary

Description

- O This device is an N-channel Power MOSFET ) developed using the second generation of t(s MDmesh™ technology.

This revolutionary Power c MOSFET associates a vertical structure to the u company’s strip layout to yield one of the world’s d lowest on-resistance and gate charge.

Features

  • Order code STL7NM60N VDSS @ TJMAX 650 V RDS(on) max. < 0.90 Ω ID 5.8 A(1) t(s) 1. The value is rated according Rthj-case c.
  • 100% avalanche tested u.
  • Low input capacitance and gate charge rod.
  • Low gate input resistance te P.

📥 Download Datasheet

Datasheet preview – 7NM60N

Datasheet Details

Part number 7NM60N
Manufacturer STMicroelectronics
File Size 787.86 KB
Description N-channel Power MOSFET
Datasheet download datasheet 7NM60N Datasheet
Additional preview pages of the 7NM60N datasheet.

📁 Similar Datasheet

  • 7NM60 - 600V N-CHANNEL POWER MOSFET (UNISONIC TECHNOLOGIES)
  • 7NM60-Q - N-CHANNEL MOSFET (UTC)
  • 7NM65 - N-CHANNEL SUPER-JUNCTION MOSFET (Unisonic Technologies)
  • 7NM65Z - N-CHANNEL MOSFET (UTC)
  • 7NM120 - N-CHANNEL MOSFET (UTC)
  • 7NM50 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 7NM70 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
  • 7NM80 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
Other Datasheets by STMicroelectronics

    Full PDF Text Transcription

    Click to expand full text
    STL7NM60N N-channel 600 V, 0.805 Ω, 5.8 A PowerFLAT™ 5x5 MDmesh™ II Power MOSFET Features Order code STL7NM60N VDSS @ TJMAX 650 V RDS(on) max. < 0.90 Ω ID 5.8 A(1) t(s) 1. The value is rated according Rthj-case c ■ 100% avalanche tested u ■ Low input capacitance and gate charge rod ■ Low gate input resistance te P Application le ■ Switching applications bso Description - O This device is an N-channel Power MOSFET ) developed using the second generation of t(s MDmesh™ technology. This revolutionary Power c MOSFET associates a vertical structure to the u company’s strip layout to yield one of the world’s d lowest on-resistance and gate charge. It is ro therefore suitable for the most demanding high Obsolete P efficiency converters. 87 5 11 4 12 14 1 PowerFLAT™ 5x5 Figure 1.
    Published: |