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7ANM60N - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Order code STB7ANM60N STD7ANM60N VDS RDS(on) max. ID 600 V 0.9 Ω 5A.
  • AEC-Q101 qualified.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance Package D²PAK DPAK G(1) S(3).

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STB7ANM60N, STD7ANM60N Datasheet Automotive-grade N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages TAB TAB 2 3 1 D2PAK 23 1 DPAK D(2, TAB) Features Order code STB7ANM60N STD7ANM60N VDS RDS(on) max. ID 600 V 0.9 Ω 5A • AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Package D²PAK DPAK G(1) S(3) Applications • Switching applications AM01475v1_noZen Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.