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STP6NA60 STP6NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE
ST P 6NA 60 ST P 6NA 60 F I
VDSS
600 V 600 V
R DS( on)
< 1.2 Ω < 1.2 Ω
ID
6.5 A 3.9 A
s TYPICAL RDS(on) = 1 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
6NA60FI Datasheet
