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4NK100Z - N-channel Power MOSFET

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.

Features

  • Order code STD4NK100Z VDS 1000 V RDS(on) max. 6.8 Ω ID 2.2 A.
  • AEC-Q101 qualified.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected.

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Datasheet Details

Part number 4NK100Z
Manufacturer STMicroelectronics
File Size 435.51 KB
Description N-channel Power MOSFET
Datasheet download datasheet 4NK100Z Datasheet
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STD4NK100Z Datasheet Automotive-grade N-channel 1000 V, 5.4 Ω typ., 2.2 A SuperMESH Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code STD4NK100Z VDS 1000 V RDS(on) max. 6.8 Ω ID 2.2 A • AEC-Q101 qualified • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications AM01476v1_tab Description This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
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