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2N5551HR - Hi-Rel NPN bipolar transistor

General Description

This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).

All part numbers are guaranteed up to 100 krad with low dose rate at 0.1 rad/s as per ESCC 22900.

Key Features

  • Vceo IC(max. ) 160 V 0.5 A.
  • Hermetic packages.
  • ESCC and JANS qualified.
  • Up to 100 krad(Si) low dose rate HFE at 5 V, 10 mA > 80 Tj(max. ) 200 °C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5551HR Datasheet Rad-Hard 160 V, 0.5 A NPN bipolar transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10450 Product status link 2N5551HR Features Vceo IC(max.) 160 V 0.5 A • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate HFE at 5 V, 10 mA > 80 Tj(max.) 200 °C Description This bipolar transistor is able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). All part numbers are guaranteed up to 100 krad with low dose rate at 0.1 rad/s as per ESCC 22900.