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2LN60K3 - N-channel Power MOSFET

Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Features

  • Order codes VDSS RDS(on) max ID STD2LN60K3 STF2LN60K3 600 V < 4.5 Ω 2 A STU2LN60K3.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected PTOT 45 W 20 W 45 W.

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STD2LN60K3, STF2LN60K3, STU2LN60K3 N-channel 600 V, 4 Ω typ., 2 A SuperMESH3™ Power MOSFET in DPAK, TO-220FP and IPAK packages Datasheet — production data Features Order codes VDSS RDS(on) max ID STD2LN60K3 STF2LN60K3 600 V < 4.5 Ω 2 A STU2LN60K3 ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected PTOT 45 W 20 W 45 W Applications ■ Switching applications TAB 3 1 DPAK TAB 3 2 1 TO-220FP 3 2 1 IPAK Figure 1. Internal schematic diagram D(2,TAB) Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
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