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29F400T - M29F400T

General Description

The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Wordby-Word basis using only a single 5V V CC supply.

For Program and Erase operations the necessary high voltages are generated internally.

Key Features

  • Erasure of a memory block may be suspended, in order to read data from another block or to program data in another block, and then resum.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M29F400T M29F400B 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB www.DataSheet4U.com 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.