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27512 - NMOS 512K 64K x 8 UV EPROM

General Description

The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM.

It is organized as 65,536 words by 8 bits.

The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package.

Key Features

  • a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows : a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 Q0 Q1 Q2 VSS 28 1 27 2 26 3 25 4 24 5 23 6 22 7 M27512 21 8 20 9 19 10 18 11 17 12 13 16 14 15 AI00766 VCC A14 A13 A8 A9 A11 GVPP A10 E Q7 Q6 Q5 Q4 Q3 DEVICE.

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Full PDF Text Transcription (Reference)

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M27512 NMOS 512K (64K x 8) UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V 28 1 FDIP28W (F) DESCRIPTION The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure. Figure 1. Logic Diagram VCC 16 A0-A15 8 Q0-Q7 E M27512 Table 1.