1N6263
DESCRIPTION
Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.
DO-35
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VRRM Repetitive Peak Reverse Voltage
Forward Continuous Current-
Ta = 25°C
IFSM
Surge non Repetitive Forward Current- tp ≤ 1s
Tstg
Storage and Junction Temperature Range
Tj
Maximum Lead Temperature for Soldering during 10s at 4mm from Case
Value
Unit
15 m A
50 m A
- 65 to 200
°C
- 65 to 200
°C
THERMAL RESISTANCE
Symbol
Rth(j-a)
Junction-ambient-
Test Conditions
Value 400
Unit °C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol VBR VF
- -...
