1N5711
DESCRIPTION
Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
VRRM Repetitive Peak Reverse Voltage
Forward Continuous Current-
Ta = 25°C
Ptot
Power Dissipation-
Ta = 25°C
Tstg
Storage and Junction Temperature Range
Tj
Maximum Lead Temperature for Soldering during 10s at 4mm from Case
DO-35
Value
Unit
15 m A
430 m W
- 65 to 200
°C
- 65 to 200
°C
THERMAL RESISTANCE
Symbol
Rth(j-a)
Junction-ambient-
Test Conditions
Value 400
Unit °C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
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