Datasheet4U Logo Datasheet4U.com

10N60M2 - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Key Features

  • Order code STFH10N60M2 VDS @ TJmax 650 V RDS(on) max 0.60 Ω ID 7.5 A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.
  • Wide distance of 4.25 mm between the pins.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
10N60 N-Channel Power MOSFET nELL
10N60 N-Channel Mosfet Transistor Inchange Semiconductor
10N60 N-CHANNEL POWER MOSFET Unisonic Technologies
10N60 N-CHANNEL MOSFET CHONGQING PINGYANG
10N60-HC N-CHANNEL MOSFET UTC

Other Datasheets by STMicroelectronics

Part Number Description
10N3L N-channel Power MOSFET
10NB37LZ STGB10NB37LZ
10NK50Z STF10NK50Z
10NK60Z N-channel MOSFET
10NK60ZFP STP10NK60ZFP

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STFH10N60M2 N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh™ M2 Power MOSFET in a TO-220FP wide creepage package Datasheet - production data Figure 1: Internal schematic diagram D(2) G(1) Features Order code STFH10N60M2 VDS @ TJmax 650 V RDS(on) max 0.60 Ω ID 7.5 A  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected  Wide distance of 4.25 mm between the pins Applications  Switching applications  LLC converters, resonant converters Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.