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ID15FFT60U1S - IPM

Description

No.

Features

  • Adopt the latest trench IGBT technology to get a good overall loss trade-off.
  • Open Emitter on N terminal for low cost current sensing.

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Datasheet Details

Part number ID15FFT60U1S
Manufacturer STARPOWER
File Size 419.53 KB
Description IPM
Datasheet download datasheet ID15FFT60U1S Datasheet

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Full PDF Text Transcription

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STARPOWER SEMICONDUCTOR LTD. oin Compact - IPM ID15FFT60U1S Features  Adopt the latest trench IGBT technology to get a good overall loss trade-off.  Open Emitter on N terminal for low cost current sensing application.  Matched propagation delay and arm shooting through prevention.  Built-in bootstrap diodes with current limiting resistor.  Provided a fault signal (FO pin) and shut-off internal IGBT when suffer S.C. and under-voltage faulty event.  RoHS compatible.  UL 1557 Compliance. TERMINAL CODE 1 NC 16 COM 2 VB(U) 3 VB(V) 4 VB(W) 5 IN(UH) 6 IN(VH) 7 IN(WH) 8 VCC 9 COM 10 IN(UL) 11 IN(VL) 17 NC 18 NW 19 NV 20 NU 21 W 22 V 23 U 24 P 25 NC 12 IN(WL) 13 VCC 14 VFO 15 CSC ID15FFT60U1S Rev.04 StarPower Semiconductor Ltd. www.powersemi.cc www.powersemi.
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