GD450MLS65F6S
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application.
Features
- Low VCE(sat) Trench IGBT technology
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175 o C
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Solar power
- 3-level-application
Equivalent Circuit Schematic
IGBT Module
IGBT
©2023 STARPOWER Semiconductor Ltd.
4/26/2023
1/14 B02
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
Q1/Q4 IGBT
Symbol VCES VGES IC ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TC=80o C
Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o C
Q2/Q3 IGBT
Symbol VCES VGES IC ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TC=80o C Pulsed Collector...
