GD25PJA120L3S_B20
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS.
Features
- Low VCE(sat) Trench IGBT technology
- 8μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated heatsink using DBC technology
Typical Applications
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
Equivalent Circuit Schematic
IGBT Module
IGBT
©2024 STARPOWER Semiconductor Ltd.
3/22/2024
1/13
B02
IGBT Module
Absolute Maximum Ratings TH=25o C unless otherwise noted
IGBT-inverter
Symbol VCES VGES IC ICM
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TH=100o C Pulsed Collector Current tp=1ms
Value
Unit
±20
Diode-inverter
Symbol...
