GD200MLT120C2S
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-applications.
Features
- Low VCE(sat) trench IGBT technology
- Low switching loss
- 10μs short circuit capability
- Low inductance case
- VCE(sat) with positive temperature coefficient
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Solar power
- UPS
- 3-Level-Applications
©2011 STARPOWER Semiconductor Ltd. 7/5/2011 1/11 Preliminary
IGBT Module
IGBT T1 T2 T3 T4 TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol VCES VGES
ICM Ptot
Description
Collector-Emitter Voltage @ Tj=25℃ Gate-Emitter Voltage @ Tj=25℃ Collector Current @ TC=25℃
@ TC=80℃ Pulsed Collector Current tp=1ms Total Power Dissipation @ Tj=175℃
GD200MLT120C2S 1200 ±20
360 200
400 1163
Units V V
Off Characteristics
Symbol V(BR)CES ICES...
