GD1100HFA120C6SF
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverter and UPS.
Features
- Low VCE(sat) Trench IGBT technology
- Short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper pinfin baseplate using AMB technology
- Press FIT contact technology
Typical Applications
- Inverter for motor drive
- AC and DC servo drive amplifier
- Uninterruptible power supply
Equivalent Circuit Schematic
©2025 STARPOWER Semiconductor Ltd. 4/15/2025 1/11 Preliminary
IGBT Module
Absolute Maximum Ratings TF=25o C unless otherwise noted
IGBT
Symbol VCES VGES ICN IC ICRM
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Implemented Collector Current Collector Current @ TF=75o C Repetitive Peak Collector Current tp=1ms...
