GD100HFQ120C1S
Description
STARPOWER IGBT Power Module provides ultra switching speed as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating.
Features
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- 10μs short circuit capability
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Switching mode power supply
- Inductive heating
- Electronic welder
Equivalent Circuit Schematic
IGBT Module
IGBT
©2018 STARPOWER Semiconductor Ltd. 2/13/2018 1/6 Preliminary
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
IGBT
Symbol VCES VGES
ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TC=25o C
@ TC=95o C
Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o C
Diode
Symbol VRRM IF IFM
Description
Repetitive Peak...