DG50Q12T2
Description
DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as Solar Power and UPS.
Features
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- Low switching loss
- Maximum junction temperature 175o C
- VCE(sat) with positive temperature coefficient
- Fast & soft reverse recovery anti-parallel FWD
- Lead free package
Typical Applications
- Solar Power
- Electronic welder
- Uninterruptible power supply
Equivalent Circuit Schematic
IGBT Discrete
IGBT
©2021 STARPOWER Semiconductor Ltd.
8/15/2021
1/9
B05
IGBT Discrete
Absolute Maximum Ratings TC=25o C unless otherwise noted
IGBT
Symbol VCES VGES
ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TC=25o C
@ TC=135o C
Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o C
Values
Unit
±20
100...
