DG25X12T2 - IGBT

STARPOWER

General Description

DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss.

They are designed for the applications such as general inverters and UPS.

Key Features

Low VCE(sat) Trench IGBT technology.
10μs short circuit capability.
Low switching loss.
Maximum junction temperature 175oC.
Low inductance case.
VCE(sat) with positive temperature coefficient.
Fast & soft reverse recovery anti-parallel FWD.
Lead free package Typical.

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DG25X12T2 igbt by STARPOWER - Datasheet Preview

Datasheet Details

Part number	DG25X12T2
Manufacturer	STARPOWER
File Size	518.40 KB
Description	IGBT
Datasheet	DG25X12T2 Datasheet

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DG25X12T2 DOSEMI DG25X12T2 1200V/25A IGBT with Diode General Description DOSEMI IGBT Power Discrete provides ultra low conduction loss as well as low switching loss. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) Trench IGBT technology  10μs short circuit capability  Low switching loss  Maximum junction temperature 175oC  Low inductance case  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD  Lead free package Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Discrete IGBT ©2020 STARPOWER Semiconductor Ltd.