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STN7120DN - 50A N-Channel Enhancement Mode MOSFET

Description

STN7120DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance.

It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

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Datasheet Details

Part number STN7120DN
Manufacturer STANSON
File Size 860.08 KB
Description 50A N-Channel Enhancement Mode MOSFET
Datasheet download datasheet STN7120DN Datasheet

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Full PDF Text Transcription

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STN7120DN N Channel Enhancement Mode MOSFET 50A DESCRIPTION STN7120DN uses Trench MOSFET technology that is uniquely optimized to provide the most efficient nigh frequency switching performance. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION POWER PACK 5x6 DD DD FEATURE l 60V/10A, RDS(ON) = 12mΩ @VGS = 10V 60V/8A, RDS(ON) = 15mΩ @VGS = 4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l PPAK5x6 package design S S SG Y：Year Code A：Date Code B：Package Code C：Process Code ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp.
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