Datasheet4U Logo Datasheet4U.com

ST16N10 - N-Channel Enhancement Mode MOSFET

Product Overview

📥 Download Datasheet

Datasheet preview – ST16N10

Datasheet Details

Part number ST16N10
Manufacturer STANSON
File Size 0.96 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST16N10 Datasheet
Additional preview pages of the ST16N10 datasheet.

Product details

Description

ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. 100V/ 10A, RDS(ON) = 140mΩ @VGS = 10V Super high

📁 Similar Datasheet

  • ST16010 - 28V RF Power LDMOS transistor (STMicroelectronics)
  • ST16045 - 28V RF Power LDMOS transistor (STMicroelectronics)
  • ST1615 - Capacitive Touch Screen Controller (Sitronix)
  • ST1624 - Capacitive Touch Screen Controller (Sitronix)
  • ST162552 - DUAL ASYNCHRONOUS RECEIVER/TRANSMITTER WITH FIFOs (Exar Corporation)
  • ST1633 - Capacitive Touch Screen Controller (Sitronix)
  • ST1633i - Capacitive Touch Screen Controller (Sitronix)
  • ST1638 - Step-Up DC/DC Converter High Efficiency PFM (Stanson Technology)
Other Datasheets by STANSON
  • ST13P10 - P-Channel Enhancement Mode MOSFET
  • ST13P10D - P-Channel Enhancement Mode MOSFET
  • ST18ADN - N-Channel Enhancement Mode MOSFET
  • ST18N10D - N-Channel Enhancement Mode MOSFET
  • ST1937 - DC-DC Step-Up Converter
  • ST1938 - DC-DC Step-Up Converter
Published: |