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ST16N10 - N-Channel Enhancement Mode MOSFET

General Description

ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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Datasheet Details

Part number ST16N10
Manufacturer STANSON
File Size 0.96 MB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet ST16N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ST16N10 N Channel Enhancement Mode MOSFET 16.0A DESCRIPTION ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.