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TR136 - High voltage fast-switching NPN power transistor

General Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA.

Figure 1.

Key Features

  • High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 1 2.

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www.DataSheet4U.com TR136 High voltage fast-switching NPN power transistor Preliminary Data Features ■ ■ ■ ■ High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 1 2 Applications ■ ■ Electronic ballast for fluorescent lighting Electronic transformer for halogen lamps TO-220 Description The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA. Figure 1. Internal schematic diagrams Table 1. Device summary Marking TR136 Package TO-220 Packing Tube Order code TR136 October 2007 Rev 1 1/9 www.st.