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STW9N150
N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH™ Power MOSFET
TARGET SPECIFICATION
General features
Type STW9N150
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VDSS 1500V
RDS(on) < 2.7Ω
ID 8A
Pw 350W
100% avalanche tested Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching Very low on-resistance
TO-247
Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
Internal schematic diagram
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STW9N150 Datasheet
