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STW18NB40FI - N-CHANNEL MOSFET

Download the STW18NB40FI datasheet PDF. This datasheet also covers the STW18NB40 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STW18NB40_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by STMicroelectronics

Part Number Description
STW18NB40 N-CHANNEL MOSFET
STW18NK60Z N-CHANNEL MOSFET
STW18NK80Z N-CHANNEL MOSFET
STW18NM60N Power MOSFET
STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STW10NB60 N-CHANNEL Power MOSFET
STW10NC60 N-CHANNEL Power MOSFET
STW10NC70Z N-CHANNEL Power MOSFET
STW10NK60Z N-channel Power MOSFET
STW10NK80Z N-CHANNEL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-CHANNEL 400V - 0.19 Ω - 18.4 A TO-247/ISOWATT218 PowerMesh™ MOSFET TYPE STW18NB40 STH18NB40FI s s s s s STW18NB40 STH18NB40FI PRELIMINARY DATA VDSS 400 V 400 V RDS(on) < 0.26 Ω < 0.26 Ω ID 18.4 A 12.4 A TYPICAL RDS(on) = 0.19 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 3 2 1 3 2 1 ISOWATT218 DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.