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STW12NA50 - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

General Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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www.DataSheet4U.com STW12NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW12NA50 s s s s s s s V DSS 500 V R DS( on) < 0.6 Ω ID 11.6 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-247 3 2 1 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.