STTH2L06 - High efficiency ultrafast diode

STMicroelectronics

General Description

The STTH2L06 is using ST Turbo 2 600 V planar Pt doping technology.

It is specially suited for SMPS and base drive transistor circuits.

Packaged in axial, SMA and SMB, this device is intended for use in high frequency inverters, free wheeling and polarity protection.

Key Features

Very low conduction losses.
Negligible switching losses.
Low forward and reverse recovery times.
High junction temperature.

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STTH2L06 high efficiency ultrafast diode by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STTH2L06
Manufacturer	STMicroelectronics
File Size	107.84 KB
Description	High efficiency ultrafast diode
Datasheet	STTH2L06 Datasheet

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STTH2L06 High efficiency ultrafast diode Features ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature Description The STTH2L06 is using ST Turbo 2 600 V planar Pt doping technology. It is specially suited for SMPS and base drive transistor circuits. Packaged in axial, SMA and SMB, this device is intended for use in high frequency inverters, free wheeling and polarity protection. A K DO-41 STTH2L06 SMA STTH2L06A SMB STTH2L06U Table 1. Device summary Symbol IF(AV) VRRM Tj VF(typ) trr (max) Value 2A 600 V 175 °C 0.85 V 60 ns October 2009 Doc ID10758 Rev 2 1/9 www.st.com 9 Characteristics 1 Characteristics STTH2L06 Table 2.