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STSJ18NF3LL - LOW GATE CHARGE STripFET II POWER MOSFET

General Description

This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process.

This silicon, housed in thermally improved SO-8™ package, exhibits optimal on-resistance versus gate charge tradeoff plus lower Rthj-c.

SPECIFICALLY DESIGNED AND OP

Key Features

  • TYPE STSJ18NF3LL.
  • STSJ18NF3LL Figure 1:Package RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com N-CHANNEL 30V - 0.016 Ω - 18A PowerSO-8™ LOW GATE CHARGE STripFET™ II POWER MOSFET Table 1: General Features TYPE STSJ18NF3LL ■ ■ ■ ■ ■ STSJ18NF3LL Figure 1:Package RDS(on) <0.019 Ω ID 18 A VDSS 30 V TYPICAL RDS(on) = 0.016 Ω @ 10V TYPICAL Qg = 12.5 nC @ 4.5 V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED IMPROVED JUNCTION-CASE THERMAL RESISTANCE PowerSO-8™ DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. This silicon, housed in thermally improved SO-8™ package, exhibits optimal on-resistance versus gate charge tradeoff plus lower Rthj-c.