Datasheet4U Logo Datasheet4U.com

STS1DN45K3 - 0.5 A SuperMESH3 Power MOSFET

General Description

SuperMESH3™ is a new Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure.

Key Features

  • Type STS1DN45K3.
  • VDSS 450 V RDS(on) max < 3.8 Ω ID 0.5 A Pw 1.7 W 100% avalanche tested Low input capacitances and gate charge Low gate input resistance SO-8.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STS100 Multifunction Telecommunications Switch Solid State Optronic
STS10100S TRENCH SCHOTTKY BARRIER DIODE JILIN SINO
STS10P3LLH6 P-channel Power MOSFET STMicroelectronics
STS10P4LLF6 P-Channel Power MOSFET STMicroelectronics
STS10PF30L P-CHANNEL POWER MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STS1DNC45 N-CHANNEL PowerMESH MOSFET
STS10DN3LH5 Power MOSFETs
STS10NF30L N-CHANNEL PowerMESH MOSFET
STS11NF30L N-CHANNEL PowerMESH MOSFET
STS11NF3LL N-CHANNEL PowerMESH MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STS1DN45K3 Dual N-channel 450 V, 3.2 Ω, 0.5 A SuperMESH3™ Power MOSFET in SO-8 Preliminary data Features Type STS1DN45K3 ■ ■ ■ VDSS 450 V RDS(on) max < 3.8 Ω ID 0.5 A Pw 1.7 W 100% avalanche tested Low input capacitances and gate charge Low gate input resistance SO-8 Application ■ Switching applications Description SuperMESH3™ is a new Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Figure 1. Internal schematic diagram Table 1.