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STS17NH3LL - N-channel Power MOSFET

General Description

This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.

This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced.

Switching application O

Key Features

  • Type STS17NH3LL VDSS 30V RDS(on).

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www.DataSheet4U.com STS17NH3LL N-channel 30V - 0.004Ω - 17A - SO-8 STripFET™ Power MOSFET for DC-DC conversion TARGET SPECIFICATION General features Type STS17NH3LL VDSS 30V RDS(on) <0.0057Ω ID 17A(1) 1. This value is rated according to Rthj-pcb ■ ■ ■ ■ Optimal RDS(on) x Qg trade-off @ 4.5 V Conduction losses reduced Improved junction-case thermal resistance Low threshold device SO-8 Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced.