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STP62NS04Z - N-channel Power MOSFET

General Description

Fully clamped MOSFET is produced by using ST's most advanced MESH OVERLAY™ process based on strip layout.

Key Features

  • Type STP62NS04Z VDSS RDS(on) max ID Clamped < 0.015 Ω 62 A.
  • 100% avalanche tested.
  • Low capacitance and gate charge.
  • 175 °C maximum junction temperature.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP62NS04Z N-channel clamped 12.5 mΩ, 62 A, TO-220 fully protected MESH OVERLAY™ Power MOSFET Features Type STP62NS04Z VDSS RDS(on) max ID Clamped < 0.015 Ω 62 A ■ 100% avalanche tested ■ Low capacitance and gate charge ■ 175 °C maximum junction temperature Application ■ Switching applications Description Fully clamped MOSFET is produced by using ST's most advanced MESH OVERLAY™ process based on strip layout. The inherent benefits of this new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operating conditions such as those encountered in the automotive environment. It is also recommended for any other application requiring extra ruggedness. 3 2 1 TO-220 Figure 1. Internal schematic diagram D(2) G(1) Table 1.