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STB28NM50N, STF28NM50N STP28NM50N, STW28NM50N
N-channel 500 V, 0.135 Ω, 21 A D2PAK, TO-220, TO-220FP, TO-247 MDmesh™ II Power MOSFET
Features
Type STB28NM50N STF28NM50N STP28NM50N STW28NM50N
■ ■ ■
VDSS (@Tjmax)
RDS(on) max
ID
3 1 2
3 1 2
TO-220FP
550 V < 0.158 Ω 21 A
TO-220
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
1
3
1
2
3
D²PAK
TO-247
Application
Switching applications Figure 1. Internal schematic diagram
Description
These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
STP28NM50N Datasheet
