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STB22NM60N, STF22NM60N, STI22NM60N STP22NM60N, STW22NM60N
N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220 and TO-247
Features
Order codes
STB22NM60N STF22NM60N STI22NM60N STP22NM60N STW22NM60N
VDSS (@Tjmax)
650 V 650 V 650 V 650 V 650 V
RDS(on) max.
< 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω
ID
16 A 16 A 16 A 16 A 16 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
STP22NM60N Datasheet
