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STGF7NB60SL - N-CHANNEL IGBT

Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

Features

  • TYPE STGF7NB60SL s s s s s Figure 1: Package IC @100°C 40 A VCES 200 V VCE(sat) (Max) @25°C < 0.045 Ω.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGF7NB60SL N-CHANNEL 7A - 600V - TO-220FP PowerMESH™ IGBT Table 1: General Features TYPE STGF7NB60SL s s s s s Figure 1: Package IC @100°C 40 A VCES 200 V VCE(sat) (Max) @25°C < 0.045 Ω POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 1 2 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz).
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