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STGD5NB120SZ - IGBT

Description

This device is low drop internally clamped IGBT developed using advanced PowerMESH technology.

This process guarantees an excellent trade-off between switching performance and low on-state behavior.

Features

  • Low on-voltage drop (VCE(sat)).
  • High current capability.
  • High voltage clamping.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TAB 23 1 DPAK , STGD5NB120SZ Datasheet 5 A, 1200 V, low drop internally clamped IGBT Features • Low on-voltage drop (VCE(sat)) • High current capability • High voltage clamping Applications • Low switching frequency applications Description This device is low drop internally clamped IGBT developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. Product status link STGD5NB120SZ Product summary Order code STGD5NB120SZ Marking GD5NB120SZ Package DPAK Packing Tape and reel DS3341 - Rev 10 - April 2023 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1.
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