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STG3P3M25K120 - IGBT Modules

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT, with outstanding performance.

Table 1.

Key Features

  • Low on-voltage drop (VCE(sat)) Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Frequency operation up to 40 kHz New generation products with tighter parameter distribution One screw mounting Compact design Semitop®3 is a trademark of Semikron Short-circuit rugged Figure 1. Internal schematic diagram 15 16.

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www.DataSheet4U.com STG3P3M25K120 Tri-phase inverter IGBT - SEMITOP®3 module Preliminary data Features ■ ■ ■ ■ ■ ■ ■ ■ ■ Low on-voltage drop (VCE(sat)) Low CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Frequency operation up to 40 kHz New generation products with tighter parameter distribution One screw mounting Compact design Semitop®3 is a trademark of Semikron Short-circuit rugged Figure 1. Internal schematic diagram 15 16 SEMITOP®3 Applications ■ ■ Inverters Motor drive 2 3 8 9 1 7 14 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT, with outstanding performance.