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DataSheet.in
STF34NM60N STP34NM60N, STW34NM60N
N-channel 600 V, 0.092 Ω , 29 A MDmesh™ II Power MOSFET TO-220, TO-247, TO-220FP
Preliminary data
Features
Type STF34NM60N STP34NM60N STW34NM60N
■ ■ ■
VDSS 600 V 600 V 600 V
RDS(on) max. 0.105 Ω 0.105 Ω 0.105 Ω
ID 29 A 29 A 29 A
PTOT 40 W 210 W 210 W
2 1 3
1 3 2
TO-247
TO-220
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
3 1 2
TO-220FP
Application
■
Switching applications Figure 1. Internal schematic diagram
Description
These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
STF34NM60N Datasheet
