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STE40NC60 - N-CHANNEL Power MOSFET

Description

The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ .

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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Full PDF Text Transcription

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N-CHANNEL 600V - 0.098Ω - 40A ISOTOP PowerMesh™ II MOSFET TYPE STE40NC60 n n n n n STE40NC60 VDSS 600V RDS(on) < 0.13Ω ID 40 A TYPICAL RDS(on) = 0.098 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
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