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STE110NS20FD - N-Channel Power MOSFET

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Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Datasheet Details

Part number STE110NS20FD
Manufacturer STMicroelectronics
File Size 212.31 KB
Description N-Channel Power MOSFET
Datasheet download datasheet STE110NS20FD Datasheet
Additional preview pages of the STE110NS20FD datasheet.

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Full PDF Text Transcription

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N-CHANNEL 200V - 0.022Ω - 110A ISOTOP MESH OVERLAY™ Power MOSFET TYPE STE110NS20FD n n n n n n n STE110NS20FD VDSS 200V RDS(on) < 0.024Ω ID 110 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING LOW INTRINSIC CAPACITANCE FAST BODY-DRAIN DIODE:LOW trr, Qrr ISOTOP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
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