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STD2HNK60Z-1 - N-Channel MOSFET

Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH.

Features

  • Order codes VDS RDS(on) max. ID STD2HNK60Z 600 V 4.8 Ω 2A STD2HNK60Z-1.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected.

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Full PDF Text Transcription

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STD2HNK60Z, STD2HNK60Z-1 Datasheet N-channel 600 V, 3.5 Ω typ., 2 A SuperMESH Power MOSFETs in DPAK and IPAK packages TAB 3 1 DPAK TAB 123 IPAK D(2, TAB) G(1) S(3) AM01476v1_tab Features Order codes VDS RDS(on) max. ID STD2HNK60Z 600 V 4.8 Ω 2A STD2HNK60Z-1 • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in onresistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
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