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N-CHANNEL 600V - 4Ω - 2A - IPAK/DPAK PowerMesh™II MOSFET
TYPE STD1HNC60
s s s s s
STD1HNC60
VDSS 600 V
RDS(on) <5Ω
ID 2A
TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED IPAK TO-251
3 2 1 1
3
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
STD1HNC60 Datasheet
