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STB9NK70Z-1 - N-channel MOSFET

Download the STB9NK70Z-1 datasheet PDF. This datasheet also covers the STB9NK70Z variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/14 STP9NK70Z /.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STB9NK70Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STB9NK70Z N-Channel Enhancement Mode MOSFET
STB9NK70Z N-channel MOSFET
STB9NK70ZFP N-Channel Enhancement Mode MOSFET
STB9NK50Z N-Channel Enhancement Mode MOSFET
STB9NK60Z N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z s s s s s s s STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z VDSS 700 700 700 700 700 V V V V V RDS(on) < 1.2 < 1.2 < 1.2 < 1.2 < 1.2 Ω Ω Ω Ω Ω ID 7.5 A 7.5 A 7.5 A 7.5 A 7.5 A Pw 115 W 35 W 115 W 115 W 156 W 3 3 1 2 2 1 TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-247 TO-220FP 3 I2PAK 3 12 1 D2PAK www.DataSheet4U.com DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
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