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STB5NC90Z-1 - N-CHANNEL POWER MOSFET

This page provides the datasheet information for the STB5NC90Z-1, a member of the STB5NC90Z N-CHANNEL POWER MOSFET family.

Datasheet Summary

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/13 DataSheet4.

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Datasheet preview – STB5NC90Z-1

Datasheet Details

Part number STB5NC90Z-1
Manufacturer STMicroelectronics
File Size 636.17 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STB5NC90Z-1 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com STP5NC90Z - STP5NC90ZFP STB5NC90Z - STB5NC90Z-1 N-CHANNEL 900V - 2.1Ω - 4.6A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III MOSFET TYPE STP5NC90Z/FP STB5NC90Z/-1 s s VDSS 900V 900V RDS(on) < 2.5Ω < 2.5Ω ID 4.6 A 4.6 A 1 3 s s s TYPICAL RDS(on) = 2.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED D²PAK TO-220 3 1 2 TO-220FP 12 3 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.
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