STB50NH02L
DESCRIPTION
The STB50NH02L utilizes the latest advanced design rules of ST’s proprietary STrip FET™ technology. This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved.
INTERNAL SCHEMATIC DIAGRAM
. APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS
Data Shee
ABSOLUTE MAXIMUM RATINGS
Symbol Vspike(1) VDS VDGR VGS ID ID IDM(2) Ptot EAS (3) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 ± 20 50 36 200 60 0.4 200 -55 to 175 Unit V V V V A A A W W/°C m J °C
September 2003
1/11
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. Data Sheet 4 U .
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THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance...
