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STB36NM60N - Power MOSFET

Description

This series of devices is designed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Type STB36NM60N.
  • VDSS @ TJmax 600V RDS(on) max.

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STB36NM60N N-channel 600 V, 0.98 Ω , 25 A, MDmesh™ II Power MOSFET in D2PAK Preliminary data Features Type STB36NM60N ■ ■ ■ VDSS @ TJmax 600V RDS(on) max <0.105Ω ID 32A PW 250W 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D²PAK 3 1 Application ■ Switching applications – Automotive Figure 1. Internal schematic diagram Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1.
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