STB20NE06L
DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature
Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
D2PAK TO-263 (suffix ”T4”)
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THERMAL DATA
R thj -case
Rthj -amb
R thc-sink Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose
2.14 62.5 0.5 300 o o
C/W C/W o C/W o C
AVALANCHE CHARACTERISTICS
Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 35 V) Max Value 20 100 Unit A m J
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) OFF
Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source...
