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STP200NF04L
STB200NF04L - STB200NF04L-1
N-CHANNEL 40V - 3 mΩ - 120 A TO-220/D²PAK/I²PAK STripFET™ II MOSFET
Table 1: General Features
TYPE STB200NF04L STP200NF04L STB200NF04L-1
s s s
Figure 1: Package
RDS(on) 3.5 mΩ 3.8 mΩ 3.8 mΩ ID 120 A 120 A 120 A
3 1 2
VDSS 40 V 40 V 40 V
TYPICAL RDS(on) = 3mΩ 100% AVALANCHE TESTED LOW THERESHOLD DRIVE
3 1
TO-220
D²PAK
DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and lesscritical alignement steps therefore a remarkable manufacturing reproducibility. This new improved device has been specifically designed for Automotive applications.
STB200NF04L Datasheet
