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STB10NB20
N - CHANNEL 200V - 0.30Ω - 10A - D2PAK PowerMESH™ MOSFET
TYPE ST B10NB20
s s s s s s
V DSS 200 V
R DS(on) < 0.40 Ω
ID 10 A
TYPICAL RDS(on) = 0.30 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE
3 1
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronis has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STB10NB20 Datasheet
