STB100NF04-1 Datasheet PDF - ST Microelectronics N-CHANNEL POWER MOSFET Specs

STB100NF04-1 - N-CHANNEL POWER MOSFET

This page provides the datasheet information for the STB100NF04-1, a member of the STB100NF04 N-CHANNEL POWER MOSFET family.

Datasheet Summary

Description

This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process.

Datasheet Details

Part number	STB100NF04-1
Manufacturer	STMicroelectronics
File Size	619.10 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STB100NF04-1 Datasheet
Additional preview pages of the STB100NF04-1 datasheet.

📁 Similar Datasheet

STB100NF04T4 - N-channel Power MOSFET (STMicroelectronics)

STB100N10F7 - N-channel Power MOSFET (STMicroelectronics)

STB100N10F7 - N-Channel MOSFET (INCHANGE)

STB100N6F7 - N-CHANNEL POWER MOSFET (STMicroelectronics)

STB100N6F7-2 - N-Channel MOSFET (INCHANGE)

STB10150C - SCHOTTKY RECTIFIER (SANGDEST MICROELECTRONICS)

STB1017PI - PNP Silicon Transistor (KODENSHI)

STB1045 - SCHOTTKY RECTIFIER (SMC Diode)

STB1060 - SCHOTTKY RECTIFIER (SANGDEST)

STB1082 - N-Channel Enhancement Mode Field Effect Transistor (SamHop Microelectronics)

Full PDF Text Transcription

Click to expand full text

www.DataSheet4U.com N-CHANNEL 40V - 0.0043Ω - 120A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET TYPE STP100NF04 STB100NF04 STB100NF04-1 s s s STP100NF04 STB100NF04, STB100NF04-1 AUTOMOTIVE SPECIFIC VDSS 40 V 40 V 40 V RDS(on) < 0.0046 Ω < 0.0046 Ω <0.0046 Ω ID 120 A 120 A 120 A Pw 300 W 300 W 300 W 12 3 TYPICAL RDS(on) = 0.0043 Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED TO-220 I2PAK 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Published: Oct 15, 2006 |